to ? 92m 1. collector 2. base 3. emitter to ? 92mod 1. emitter 2. collector 3. base to-92mod plastic-encapsulate transistors 2SB647/2SB647a transistor (pnp) features z low frequency power amplifier z complementary pair with 2sd667/a maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -10a,i e =0 -120 v 2SB647 -80 collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 2SB647a -100 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v collector cut-off current i cbo v cb =-100v,i e =0 -10 a 2SB647 60 h fe(1) * v ce =-5v, i c =-150ma 2SB647a 60 320 200 dc current gain h fe(2) * v ce =-5v, i c =-500ma 30 collector-emitter saturation voltage v ce(sat) * i c =-500ma,i b =-50ma -1 v base-emitter voltage v be * v ce =-5v, i c =-150ma -1.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 20 pf transition frequency f t v ce =-5v,i c =-150ma 140 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe(1) 2SB647 type 2SB647a rank b c d range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage -120 v 2SB647 -80 v ceo collector-emitter voltage 2SB647a -100 v v ebo emitter-base voltage -5 v i c collector current -1 a p c collector power dissipation 900 mw r ja thermal resistance from junction to ambient 139 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jul,2013
-20 -40 -60 -80 -100 10 100 -0.1 -1 -10 -100 -1000 -0 -200 -400 -600 -800 -1000 0 25 50 75 100 125 150 0 300 600 900 1200 -0.1 -1 -10 -100 -1000 -10 -100 -1 -10 -100 -1000 10 100 1000 -0.1 -1 -10 1 10 100 1000 -0 -200 -400 -600 -800 -1000 -0.1 -1 -10 -100 -1000 -0 -1 -2 -3 -4 -5 -6 -7 -0 -50 -100 -150 -200 500 i c f t ?? common emitter v ce = -5v t a =25 collector current i c (ma) transition frequency f t (mhz) =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) -500 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 2SB647a i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = -5v -30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =-5v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) -1ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.2ma -0.3ma -0.4ma i b =-0.1ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jul,2013
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